RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing

Perrosé, M., Acosta Alba, P., Moulin, M., Augendre, E., Lugo, J., Raskin, J.-P., & Reboh, S. (2023). RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing. IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems – SiRF 2023, Las Vegas, Nevada, USA. https://hdl.handle.net/2078.5/164302