Dynamic self-heating effect is characterised in n-channel FinFETs on Silicon-on-Insulator (SOI) platform. RF extraction technique is discussed and dependence of thermal resistance on fin width, number of parallel fins and fin spacing is studied.
Makovejev, S., Olsen, S., & Raskin, J.-P. (2011). RF extraction of self-heating effects in FinFETs of various geometries. Proceedings of the Postgraduate Conference at Newcastle University – PGC 2011. Published. Postgraduate Conference at Newcastle University – PGC 2011, Newcastle Upon Tyne, UK. https://hdl.handle.net/2078.5/230740