Performances of Soi Cmos Ota Combining Ztc and Gain-boosting Techniques

Gentinne, B.;Eggermont, JP.;Colinge, JP.
(1995) Electronics Letters — Vol. 31, n° 24, p. 2092-2093 (1995)

Files

No attached file found for this publication.

Details

Authors
  • Gentinne, B.
    Author
  • Eggermont, JP.
    Author
  • Colinge, JP.
    Author
Abstract
A folded-cascode CMOS FD SOI OTA with a gain-boosting stage has been designed using the ZTC concept. The measured room-temperature 115dB DC gain for a 113MHz transition frequency outperforms all previous SOI or bulk opamp performances. High-temperature measurements up to 400 degrees C are reported for the first time.
Affiliations

Citations

Gentinne, B., Eggermont, JP., & Colinge, JP. (1995). Performances of Soi Cmos Ota Combining Ztc and Gain-boosting Techniques. Electronics Letters, 31(24), 2092-2093. https://doi.org/10.1049/el:19951418 (Original work published 1995)