Body-biasing control on zero-temperature-coefficient in partially depleted SOI MOSFET
(2008) 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems — Location: Orlando, FL, USA (23.January.2008)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- This work investigates the possibility to tune the zero-temperature-coefficient (ZTC) points in partially depleted (PD) SOI nMOSFET technology by controlling the body-source forward bias (V/sub BS/). Measured transconductance and drain current in the saturation region at temperatures between 25 and 200 degrees C were observed for various body-source forward bias conditions. It is found that the variation of threshold voltage (V/sub TH/) with body bias has an influence on ZTC points. The measurement results show wide voltage-range of gate-voltage giving either the transconductance ZTC point (V/sub GS/,/sub ZTC9m/) or the drain-current ZTC point (V/sub GS/,/sub ZTC1DS/) opening important opportunities in RF circuits design for nigh temperature applications.
- Affiliations
Citations
El Kaamouchi, M., Dambrine, G., Si Moussa, M., Emam, M., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2008). Body-biasing control on zero-temperature-coefficient in partially depleted SOI MOSFET. 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, p. 114-117. https://hdl.handle.net/2078.5/230462