Three-Dimensional NEGF Simulations of constriction tunnel barrier Silicon Nanowire MUGFETs

Afzalian, Aryan;Lee, Chi-Woo;Yan, Ran;Dehdashti, Nima;Colinge, Jean-Pierre;et.al.
(2009) 215th ECS Meeting — Location: San Francisco (USA) (24.May.2009)

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Authors
  • Afzalian, AryanUCLouvain
    Author
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Yan, RanTyndall National Institute, University of Cork
    Author
  • Dehdashti, NimaTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
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Abstract
In this paper, we investigate the effect of cross-section variations in nanowire MUGFETs through 3D quantum simulations based on Non-Equilibrium Green’s Function (NEGF) formalism. We show that the effect of cross-section variations in a nanowire results in energy barriers in the conduction band that can be interpreted as a local increase of the bandgap. In narrow nanowires with a cross section of a few nanometers, this can strongly influence the current and the characteristics of the device. A small constriction resulting in a barrier of the order of a 0.1eV is shown to be an effective way to create a tunnel barrier that can be used to improve the on/off current ratio in ultra-scaled transistors.
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Afzalian, A., Lee, C.-W., Yan, R., Dehdashti, N., Colinge, C., & Colinge, J.-P. (2009). Three-Dimensional NEGF Simulations of constriction tunnel barrier Silicon Nanowire MUGFETs. ECS Transactions, 19(4), 229-234. https://hdl.handle.net/2078.5/252450 (Original work published 2009)