An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics

Dehan, Morin;Raskin, Jean-Pierre
(2002) 2nd European Workshop on Ultimate Integration of Silicon (ULIS 2001) — Location: GRENOBLE(France) (18.January.2001)

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Asymmetric doped channel metal oxide semiconductor field effect transistors (MOSFETs) have recently been investigated by several authors in bulk and silicon-on-insulator (Sol) technologies as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage rolloff issues in deep sub-micrometer devices. In this paper, the DC and microwave characteristics of the asymmetric doped channel fully depleted (FD) SOI MOSFET are presented and compared to conventional uniformly doped FD SOI MOSFET. (C) 2002 Elsevier Science Ltd. All rights reserved.
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Dehan, M., & Raskin, J.-P. (2002). An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics. Solid-State Electronics, 46(7), 1005-1011. https://hdl.handle.net/2078.5/210322 (Original work published 2002)