3D simulation and measurement of very narrow AM and IM triple-gate MOSFETs

Yan, Ran;Afzalian, Aryan;Lee, Chi-Woo;Dehdashti Akhavan, Nima;Colinge, Jean-Pierre;et.al.
(2008) 2008 China-Ireland International Conference on Information and Communication Technologies (CIICT 2008) — Location: Beijing (China) (26.September.2008)

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Authors
  • Yan, RanTyndall National Institute, University of Cork
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Dehdashti Akhavan, NimaTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
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Abstract
This work analyzes the performance of very narrow triple-gate SOI MOSFETs on the basis of experimental and 3D simulation data; Short channel effects (SCEs) are quite reduced in those devices due to the good electrostatic control by the surrounding gate and the high Lg/Wfin ratio. The experimental data indicate that SCEs of accumulation-mode (AM) triple gate devices are comparable to those observed in inversion-mode (IM) devices down to a agte length of 50 nm. This makes AM triple gate (or more generally, multi-gate) MOSFETs interesting devices for digital applications.
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Yan, R., Afzalian, A., Lee, C.-W., Dehdashti Akhavan, N., Xiong, W., & Colinge, J.-P. (2008). 3D simulation and measurement of very narrow AM and IM triple-gate MOSFETs. Proceedings of the 2008 China-Ireland International Conference on Information and Communication Technologies (CIICT 2008), p. 627-630. https://hdl.handle.net/2078.5/252994