Gate-contolled linear magnetoresistane in thin Bi_2Se_3 sheets

Gao, B.F.;Gehring, Pascal;Burghard, M.;Kern, K.
(2012) Applied Physics Letters — Vol. 100, n° np, p. 4 p. (2012)

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Authors
  • Gao, B.F.Max Planck Institute for Solid State Research
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  • Gehring, Pascalorcid-logoUCLouvain
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  • Burghard, M.Max Planck Institute for Solid State Research
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  • Kern, K.Max Planck Institute for Solid State Research
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Abstract
We explore the emergence of linear magnetoresistance in thin Bi_2Se_3 sheets upon tuning the carrier density using a back gate. With increasingly negative gate voltage, a pronounced magnetoresistance of ~100% is observed, while the associated B-field dependence changes from quadratic to linear. Concomitantly, the resistance-versus-temperature curves evolve from metallic to semiconductor-like, and increasingly strong weak anti-localization behavior is manifested. Analysis of the magnetoresistance data reveals two contributions, namely from the bulk conduction band and from a state inside the bulk gap. The latter is responsible for the linear magnetoresistance and likely represents the topologically protected surface state.
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Gao, B. F., Gehring, P., Burghard, M., & Kern, K. (2012). Gate-contolled linear magnetoresistane in thin Bi_2Se_3 sheets. Applied Physics Letters, 100(np), 4 p. https://doi.org/10.1063/1.4719196 (Original work published 2012)