Characterization and modelling of quasi double-gate SOI MOSFETsChung, Tsung Ming;Raskin, Jean-Pierre(2003) Union Radio-Scientifique Internationale (U.R.S.I.) — Location: Brussels, Belgium (18.December.2003)
FilesNo attached file found for this publication.DetailsAuthorsChung, Tsung MingUCLouvainAuthorRaskin, Jean-PierreUCLouvainAuthorAffiliationsUCLouvainFSA/ELEC - Département d'électricitéShow moreCitations APA Chicago FWB Chung, T. M., & Raskin, J.-P. (2003). Characterization and modelling of quasi double-gate SOI MOSFETs. Proceedings of the Union Radio-Scientifique Internationale (U.R.S.I.), p. 39. https://hdl.handle.net/2078.5/229440