[Models for implanted MOS transistors]
(1977) Modelling Semiconductor Devices — Location: Lausanne, Switzerland (18.October.1977)
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- Abstract
- The effects of implantation on threshold voltage for a p-type substrate are reviewed. The I-V characteristics of an n-channel device are considered for a rectangular impurity profile and the model shown to agree with practical measurements.
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Citations
Van de Wiele, F., Demoulin, E., Sinon, R., & Gilles, C. (1977). [Models for implanted MOS transistors]. Modelling Semiconductor Devices, p. 325-338. https://hdl.handle.net/2078.5/221646