High-frequency performance of Schottky Barrier p-MOSFET devices

Raskin, Jean-Pierre;Pearman, D.J.;Pailloncy, Guillaume;Larson, J.M.;Whall, T.E.;et.al.
(2008) IEEE Electronic Device Letters — Vol. 29, n° 4, p. 396-398 (2008)

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  • Pearman, D.J.
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  • Pailloncy, GuillaumeUCLouvain
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  • Larson, J.M.
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  • Whall, T.E.
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Raskin, J.-P., Pearman, D. J., Pailloncy, G., Larson, J. M., Snyder, J., Leadley, D. L., & Whall, T. E. (2008). High-frequency performance of Schottky Barrier p-MOSFET devices. IEEE Electronic Device Letters, 29(4), 396-398. https://hdl.handle.net/2078.5/211306 (Original work published 2008)