An SOI nano flash memory device
(1999) IEEE International SOI Conference 1999 — Location: Rohnert Park, CA (USA) (4.October.1999)
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- Abstract
- Several nano flash memory devices have been reported in the literature. These devices are basically miniature EEPROM cells in which electrons are injected in a floating storage mode by tunnel effect through an oxide. The variation of the potential of the floating mode due to the electron injection modifies the threshold voltage of a thin and narrow SOI MOSFET, which makes it possible to store information in the device.
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Citations
Tang, X., Baie, X., Bayot, V., Van de Wiele, F., & Colinge, J.-P. (1999). An SOI nano flash memory device. Proceedings of the IEEE International SOI Conference 1999, p. 100. https://hdl.handle.net/2078.5/219090