TCAD study of the detection mechanisms in Si-Nanoribbon gas sensors
(2011) 41st European Solid-State Device Research Conference – ESSDERC 2011 — Location: Helsinki, Finland (12.September.2011)
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- et. al.
- Abstract
- An extensive simulation analysis of silicon-nanoribbon field-effect transistors for the detection of chemical warfare agents has been performed through investigation of the physical behavior of the device. An accurate modeling of the nanoribbon interfaces has been carried out before and after gas exposure by combining simulation, characterization techniques and validation against experiments. A quantitative description of the physical mechanisms involved in the gas detection has been obtained.
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Silvestri, L., Reggiani, S., Passi, V., Ravaux, F., Dubois, E., Raskin, J.-P., & et al. (2011). TCAD study of the detection mechanisms in Si-Nanoribbon gas sensors. Proceedings of the 41st European Solid-State Device Research Conference – ESSDERC 2011, pp. 131-134. https://doi.org/10.1109/ESSDERC.2011.6044217