Two-Dimensional Graphene with Structural Defects: Elastic Mean Free Path, Minimum Conductivity, and Anderson Transition

Lherbier, Aurélien;Dubois, Simon;Declerck, Xavier;Roche, Stephan;Charlier, Jean-Christophe;et.al.
(2011) Physical Review Letters — Vol. 106, n° 4, p. 46803 (2011)

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Abstract
Quantum transport properties of disordered graphene with structural defects (Stone-Wales and divacancies) are investigated using a realistic pi-pi* tight-binding model elaborated from ab initio calculations. Mean free paths and semiclassical conductivities are then computed as a function of the nature and density of defects (using an order-N real-space Kubo-Greenwood method). By increasing the defect density, the decay of the semiclassical conductivities is predicted to saturate to a minimum value of 4e(2)/pi h over a large range (plateau) of carrier density (>0.5 X 10(14) cm(-2)). Additionally, strong contributions of quantum interferences suggest that the Anderson localization regime could be experimentally measurable for a defect density as low as 1%.
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Lherbier, A., Dubois, S., Declerck, X., Roche, S., Niquet, Y.-M., & Charlier, J.-C. (2011). Two-Dimensional Graphene with Structural Defects: Elastic Mean Free Path, Minimum Conductivity, and Anderson Transition. Physical Review Letters, 106(4), 46803. https://doi.org/10.1103/PhysRevLett.106.046803 (Original work published 2011)