Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the V/G criterion

Van Goethem, N.; de Potter, A.; Van den Bogaert, N.; Dupret, François

doi:10.1016/j.jpcs.2007.07.129

Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the V/G criterion

Van Goethem, N.

;

de Potter, A.

;

Van den Bogaert, N.

;

Dupret, François

(2008) 2nd International Symposium on Point Defects and Nonstoichiometry — Location: Sendai(Japan)

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Authors

Van Goethem, N.UCLouvain
Author
de Potter, A.UCLouvain
Author
Van den Bogaert, N.UCLouvain
Author
Dupret, FrançoisUCLouvain
Author

Abstract

Using the FEMAG software, fully time-dependent and global simulations are conducted to predict the distribution of point defects in a growing silicon crystal. Furthermore, the defect governing model is adapted in order to better agree with available measurements of self-interstitial and vacancy diffusion coefficients while respecting the V/G criterion. It is shown that introducing a thermal drift effect can facilitate the construction of a relevant model satisfying both conditions. (C) 2007 Elsevier Ltd. All rights reserved.

Affiliations

UCLouvainFSA/MECA - Département de mécanique

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Van Goethem, N., de Potter, A., Van den Bogaert, N., & Dupret, F. (2008). Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the V/G criterion. Journal of Physics and Chemistry of Solids, 69(2-3), 320-324. https://doi.org/10.1016/j.jpcs.2007.07.129 (Original work published 2008)