Internal stress and opto-electronic properties of ZnO thin films deposited by reactive sputtering in various oxygen partial pressures
(2017) Journal of Applied Physics — Vol. 122, n° 15, p. 155306 (2017)
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- In this article, we propose ZnO thin films as a suitable material for piezoresistors in transparent and flexible electronics. ZnO thin films have been deposited by DC reactive magnetron sputtering at room temperature at various oxygen partial pressures. All the films have a wurtzite structure with a strong (0002) texture measured by XRD and are almost stoichiometric as measured by inductively coupled plasma optical emission spectroscopy. The effect of oxygen concentration on grain growth has been studied by in-situ multi-beam optical stress sensor, showing internal stress going from 350 MPa to −1.1 GPa. The transition between tensile and compressive stress corresponds to the transition between metallic and oxidized mode of reactive sputtering. This transition also induces a large variation in optical properties—from absorbent to transparent, and in the resistivity—from 4×10−2Ω.cm to insulating. Finally, the piezoresistance of the thin film has been studied and showed a gauge factor (ΔR/R)/ε comprised between −5.8 and −8.5.
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Tuyaerts, R., Poncelet, O., Raskin, J.-P., & Proost, J. (2017). Internal stress and opto-electronic properties of ZnO thin films deposited by reactive sputtering in various oxygen partial pressures. Journal of Applied Physics, 122(15), 155306. https://doi.org/10.1063/1.4996453 (Original work published 2017)