Numerical simulation of heat transfer in LEC growth of gallium arsenide
(1988) ESPRIT ’88. Putting the Technology to Use. Proceedings of the 5th Annual ESPRIT Conference — Location: Brussels, Belgium (14.November.1988)
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- Abstract
- Semiconductor crystal growth is a very complex process occurring on a small geometrical scale. One of the major concerns is the dislocation density which, in the case of gallium arsenide, must remain below an acceptable level for its use as a substrate in electronic devices. The authors show how numerical simulation is able to predict the level of thermal stresses which cause dislocations and to demonstrate the consequences of geometrical modifications of the furnace. They also discuss natural convection in the melt and compare recent numerical results to experimental measurements.
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Nicodeme, P., Dupret, F., Crochet, M., Farges, J. P., & Nagel, G. (1988). Numerical simulation of heat transfer in LEC growth of gallium arsenide. ESPRIT ’88. Putting the Technology to Use. Proceedings of the 5thAnnual ESPRIT Conference, Vol. 1, p. 314-24. https://hdl.handle.net/2078.5/227295