Double gate SOI MOSFET – Considerations for improved cut-off frequency
(2004) International Conference on Solid-State Devices and Materials – SSDM’2004 — Location: Tokyo, Japan (15.September.2004)
Files
No attached file found for this publication.
Details
- Authors
- Affiliations
Citations
Kranti, A., Chung, T. M., & Raskin, J.-P. (2004). Double gate SOI MOSFET – Considerations for improved cut-off frequency. Proceedings of the International Conference on Solid-State Devices and Materials – SSDM’2004, pp. 784-785. https://hdl.handle.net/2078.5/229169