Low pressure CVD of graphene on Cu thin film and reliable proximity graphene transfer for electronic applications

Huet, Benjamin;Raskin, Jean-Pierre
(2014) Graphene & Co. Frontier Research in Graphene-based Systems — Location: Institut d’étude scientifique de Cargèse (8.April.2015)

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Abstract
Graphene is a two dimensional monolayer composed of carbon atoms tightly packed into a hexagonal lattice. This single sheet sparked a great deal of interest among the research community due to its extraordinary properties which make it attractive for a wide range of applications, particularly in the micro electronics field. Currently, chemical vapor deposition (CVD) on copper foils is considered as the most promising route to synthesize graphene in terms of structural quality, thickness, uniformity and scalability [1]. However, one of the key limitations to the development of graphene-based devices emerges from the additional step required to transfer graphene from Cu foils onto specific substrates, typically dielectric materials [2, 3]. This transfer step is known to cause adverse effects on graphene quality and hinders drastically its processability. The transfer step can be circumvented by growing graphene on copper thin film pre-deposited on insulating substrates and by subsequently using this film as a sacrificial layer [4, 5]. [1] X. Li et al., Science, Vol. 324, no. 5932, pp. 1312–1314, 2009. [2] Y. Lee et al., Nano Letters, Vol. 10, no. 2, pp. 490–493, 2010. [3] R. Shi et al., Applied Physics Letters, vol. 102, no. 11, pp. 113102, 2013. [4] C.-Y. Su et al., Nano Letters, vol. 11, no. 9, pp. 3612-3616, 2011. [5] A. Ismach et al., Nano Letters, vol. 10, no. 5, pp. 1542-1548, 2010.
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Huet, B., & Raskin, J.-P. (2014). Low pressure CVD of graphene on Cu thin film and reliable proximity graphene transfer for electronic applications. Graphene & Co. Frontier Research in Graphene-based Systems, Institut d’étude scientifique de Cargèse. https://hdl.handle.net/2078.5/268319