Piezoresistance of nano-scale silicon up to 2GPa in tension
(2013) Applied Physics Letters — Vol. 102, n° 3, p. 31911 (2013)
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- Abstract
- The piezo-resistance of 100 nm-thick, [110] oriented, p-type, mono-crystalline Si beams has been investigated under large uniaxial tension up to 2 GPa using an original on-chip tensile testing set-up. The piezo-resistance coefficient (π) was found to increase by a factor of 6 compared with ∼1.5 for Si bulk, when decreasing the dopant concentration from Na ∼ 1 × 1019 cm−3 down to Na ∼ 5 × 1017 cm−3. Reduction of resistance by a factor of 5.8, higher than theoretical maximum of 4.5, is reported for Na ∼ 5 × 1017 cm−3 under a stress of 1.7 GPa, without any sign of saturation.
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Bhaskar, U. K., Pardoen, T., Passi, V., & Raskin, J.-P. (2013). Piezoresistance of nano-scale silicon up to 2GPa in tension. Applied Physics Letters, 102(3), 31911. https://doi.org/10.1063/1.4788919 (Original work published 2013)