Doping Fluctuation Effects in Trigate SOI MOSFETs

Yan, Ran;Lynch, Danny;Cayron, Thibault;Lederer, Dimitri;Colinge, Jean-Pierre;et.al.
(2008) 4th EuroSOI Workshop 2008 — Location: Cork (Ireland) (23.January.2008)

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Authors
  • Yan, RanTyndall Natioanl Institute, University of Cork
    Author
  • Lynch, DannyUniversity College Cork
    Author
  • Cayron, ThibaultInstitut National Polytechnique, Grenoble
    Author
  • Lederer, DimitriTyndall National Institute, University of Cork
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
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Abstract
Random doping fluctuation effects are studied in n-channel Trigate SOI MOSFETs using numerical simulations. The presence of a single positive doping impurity atom increases the threshold voltage. Electrical parameters vary with the polarity and the physical location of the impurity atom.
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Yan, R., Lynch, D., Cayron, T., Lederer, D., Afzalian, A., Lee, C.-W., & Colinge, J.-P. (2008). Doping Fluctuation Effects in Trigate SOI MOSFETs. Proceedings of the 4th EuroSOI Workshop 2008, p. 63-64. https://hdl.handle.net/2078.5/252653