Temperature dependence of RF losses in HR SOI substrates
(2005) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environmen — ISBN: [978-1-4020-3012-3], p. 192-196, published
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- Abstract
- High Resistivity (HR) Si substrates with resistivity values higher than 3 kΩ.cm have been demonstrated to be suitable for High Frequency applications due to their negligible ohmic losses [1, 2]. However, oxide-passivated HR Si substrates usually suffer from resistivity degradation near the SiO2/Si interface due to the presence of fixed charges (Qox) in the oxide. These charges attract free carriers near the substrate surface, forming a low conductivity accumulation or inversion layer [3]. Coplanar structures made on such substrates are very sensitive to the presence of this layer, which can lead to substantial RF loss increases [4]. As shown in [4] and [5], an efficient way to (partially or entirely) remove this conductive layer is to introduce a large density of traps (Dit) at the SiO2/Si interface. In this work we investigate for the first time the suitability of HR SOI substrates for high temperature RF applications. The proposed analysis combines the effects of high temperature (T) and interface traps on resistivity degradation in HR SOI substrates. The temperature range of interest is selected from 20 to 200°C. It is shown that substrates without traps exhibit poorer high temperature performance.
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Lederer, D., & Raskin, J.-P. (2005). Temperature dependence of RF losses in HR SOI substrates. In Flandre D., Nazarov A.N., Hemment P.L.F. (ed.), Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environmen (1st ed., p. p. 192-196). Kluwer Academic Publ. -NATO Science Series Elsevier. https://hdl.handle.net/2078.5/219791