Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ-SiO2 gate stackset al.;Nguyen, Viet-Hung;et al.(2015) Applied Physics Letters — Vol. 106, n° 2, p. 23508 (2015)
FilesNguyenAPL2015.pdf Open Access Adobe PDF900.3 KBDownloadDetailsAuthorset al.AuthorNguyen, Viet-HungUCLouvainAuthoret al.AuthorAffiliationsCEA-GrenobleShow moreCitations APA Chicago FWB et al., Nguyen, V.-H., & et al. (2015). Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ-SiO2 gate stacks. Applied Physics Letters, 106(2), 23508. https://doi.org/10.1063/1.4906199 (Original work published 2015)