Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ-SiO2 gate stacks

et al.;Nguyen, Viet-Hung;et al.
(2015) Applied Physics Letters — Vol. 106, n° 2, p. 23508 (2015)

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et al., Nguyen, V.-H., & et al. (2015). Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ-SiO2 gate stacks. Applied Physics Letters, 106(2), 23508. https://doi.org/10.1063/1.4906199 (Original work published 2015)