Non-linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling
(2005) International Journal of Numerical Modelling: Electronic Networks, Devices and Fields — Vol. 18, n° 4, p. 283-296 (2005)
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- Abstract
- The harmonic and intermodulation distortions of both fully-depleted (FD) and partially-depleted (PD) silicon-on-insulator (SOI) MOSFETs are studied. The analysis is based on the recently developed integral function method and the results are compared to a third-order Volterra model of the MOSFET. This modelling helps us to understand the non-linear mechanisms of the considered devices and to predict their frequency behaviour. The models are validated through large-signal network analyser measurements. The devices performances are discussed. Copyright (c) 2005 John Wiley & Sons, Ltd.
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Parvais, B., Cerdeira, A., Schreurs, D., & Raskin, J.-P. (2005). Non-linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 18(4), 283-296. https://doi.org/10.1002/jnm.578 (Original work published 2005)