First-principles study of second-order Resonance Raman scattering of silicon

Gillet, Yannick;Giantomassi, Matteo;Gonze, Xavier;Kontur, Stefan;Draxl, Claudia
(2015) Electron-phonon Meeting — Location: Rome (14.January.2015)

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  • Gillet, YannickUCLouvain
    Author
  • Giantomassi, MatteoUCLouvain
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  • Gonze, XavierUCLouvain
    Author
  • Kontur, StefanHumboldt-Universitat zu Berlin
    Author
  • Draxl, ClaudiaHumboldt-Universitat zu Berlin
    Author
Abstract
In this work, we want to investigate the evolution of the second-order Raman scattering process when the laser frequency is changed. The second-order intensity can be computed from the generalization of the approach used for first-order intensity [Y. Gillet et al, Phys. Rev. B 88, 094305 (2013) and C. Ambrosch-Draxl et al, Phys. Rev. B 65, 064501 (2002)], combining multiple finite difference calculations with supercells generated on different points in the Brillouin Zone. We present the general methodology and the results obtained in the silicon case.
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Gillet, Y., Giantomassi, M., Gonze, X., Kontur, S., & Draxl, C. (2015). First-principles study of second-order Resonance Raman scattering of silicon. Electron-phonon Meeting, Rome. https://hdl.handle.net/2078.5/194234