Study on titanium salicide process for thin-film SOI devices
(1997) Proceedings of the Symposium J on Advanced Materials for Interconnections of the 1996 E-MRS Spring Meeting Conference — Location: STRASBOURG(France) (4.June.1996)
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- Abstract
- TFSOI (Thin-Film Silicon-On-Insulator) technology has made significant progress recently. In this work, the titanium SALICIDE (Self-Aligned siLICIDE) process has been studied, optimized and applied on a CMOS-compatible TFSOI technology for low-voltage, low-power microwave applications. The gate sheet resistance and total source/drain series resistance of a TFSOI NMOSFET with a 80 nm thick active silicon layer are 6.2 Omega/square and 700 Omega.mu m, respectively, with a 30 nm thick titanium disilicide on both the gate and source/drain areas. The maximum oscillation frequency, f(max), of a 0.75 mu m TFSOI NMOSFET fabricated with this technology is equal to 11 GHz for a supply voltage of 0.9 V.
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Citations
Chen, J., & Colinge, JP. (1997). Study on titanium salicide process for thin-film SOI devices. Microelectronic Engineering, 33(1-4), 189-194. https://doi.org/10.1016/S0167-9317(96)00044-5 (Original work published 1997)