High temperature DC and RF behavior of partially depleted SOI versus deep n-well protected bulk MOSFETs

Emam, Mostafa;Vanhoenacker-Janvier, Danielle;Raskin, Jean-Pierre
(2009) 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF09) — Location: San Diego, CA, USA (19.January.2009)

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The introduction of deep n-well protection for bulk MOS transistors can highly enhance their DC and RF performance. It also gives the advantage of having floating-body and body-tied structures in bulk MOSFETs while eliminating the disadvantages related to the shift in performance between these two structures. We demonstrate that the high temperature, DC and RF performance of n-well isolated bulk MOSFETs are really competitive compared to the state-of-the-art Partially Depleted SOI MOS technology.
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Emam, M., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2009). High temperature DC and RF behavior of partially depleted SOI versus deep n-well protected bulk MOSFETs. In Chappell, W.J.; (ed.), 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF09) (p. 4 pp.). IEEE. https://doi.org/10.1109/SMIC.2009.4770530