Effect of ionizing irradiation on electrical properties of buried multilayer dielectrics of SOI structures, obtained by ZMR technique

Vovk, Ya.N.;Barchuk, I.P.;Kilchytska, Valeriya;Lysenko , V.S.;Rudenko, Tamara;et.al.
(1996) Mikroelectronika — Vol. 25, n° 5, p. 346-353 (1996)

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  • Vovk, Ya.N.Institute of Semiconductor Physics, Kiev
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  • Barchuk, I.P.Institute of Semiconductor Physics, Kiev
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  • Kilchytska, ValeriyaUCLouvain
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  • Lysenko , V.S.Institute of Semiconductor Physics, Kiev
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  • Rudenko, TamaraInstitute of Semiconductor Physics, Kiev
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Vovk, Ya. N., Barchuk, I. P., Kilchytska, V., Lysenko, V. S., Nazarov, A., & Rudenko, T. (1996). Effect of ionizing irradiation on electrical properties of buried multilayer dielectrics of SOI structures, obtained by ZMR technique. Mikroelectronika, 25(5), 346-353. https://hdl.handle.net/2078.5/56148 (Original work published 1996)