Analysis of He-4 implanted in Al foils using the He-4(p,p)He-4 backscattering interaction
(2002) Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms — Vol. 197, n° 3-4, p. 271-277 (2002)
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- Solid He-4 targets were prepared by implantation of He ions of various energies into thin and thick Al host foils. He concentrations and implantation profiles were analyzed through the proton backscattering technique taking advantage of the He-4(p,p)He-4 strong resonance around 2.2 MeV incident energy. The He retention was found to depend strongly on the Al foil thickness, but on the other hand it was found very stable versus the time after implantation. The consistency of the SIMNRA code was tested in different situations. (C) 2002 Elsevier Science B.V. All rights reserved.
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El Masri, Y., Moroso, N., Zaconte, V., Heitz, C., Cabrera Jamoulle, J., Dufauquez, C., Roberfroid, V., Van Mol, J., Lehmann, J., Vanderbist, F., Leleux, P., & Couder, M. (2002). Analysis of He-4 implanted in Al foils using the He-4(p,p)He-4 backscattering interaction. Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 197(3-4), 271-277. https://hdl.handle.net/2078.5/49781 (Original work published 2002)