Properties of SOI MOSFETs obtained on multilayer buried dielectrics
(1994) 6th International Electrochemical Society meeting and Symposium on “Silicon-on-Insulator Technology and Devices” — Location: San Francisco (USA) (22.May.1994)
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Lysenko, V. S., Nazarov, A., Rudenko, T., Rudenko, A. N., Kilchytska, V., Givargizov, E. I., & Limanov, A. B. (1994). Properties of SOI MOSFETs obtained on multilayer buried dielectrics. Proceedings of the 6th International Electrochemical Society meeting and Symposium on “Silicon-on-Insulator Technology and Devices”, p. 483. https://hdl.handle.net/2078.5/253087