Surface characterization of a low dielectric constant polymer-SiLK* polymer, and investigation of its interface with Cu

Rajagopal, A;Grégoire, Charles;Lemaire, JJ;Pireaux, Jean-Jacques;Waeterloos, JJ;et.al.
(1999) 1st International Conference on Advanced Materials and Processes for Microelectronics — Location: SAN JOSE (California) (15.March.1999)

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  • Rajagopal, A
    Author
  • Grégoire, CharlesUCLouvain
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  • Lemaire, JJ
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  • Pireaux, Jean-JacquesUnamur
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  • Waeterloos, JJ
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Abstract
The integration of copper and new low dielectric constant materials is a fundamental challenge to be met for further miniaturization of high speed integrated circuits. In this preliminary work, core level x-ray photoelectron spectroscopy (XPS) has been used for the first characterization of the surface composition of Dow Chemical's SiLK* semiconductor dielectric (*trademark of the Dow Chemical Company), its behavior during annealing in vacuo, and its interface formation with thermally evaporated copper in situ. The fully conjugated SiLK* resin shows a C is spectrum with intense shake-up structures, quite similar to those of polystyrene; a small amount of oxygen is detected. Upon annealing in ultrahigh vacuum (7.10(-9) Pa) no significant outgassing is observed; no noticeable change in intensity, width, position of the C 1 s and O 1 s core level peaks or satellite structures is measured. After annealing, the interface formation between SiLK* dielectric and copper has been characterized as a function of incremental coverages from 0.5 to 10 Angstrom of Cu. While the XPS C is spectrum shows only a normal intensity decrease, the Cu 2p(3/2) levels shift from a high binding energy to a purely metallic value: this is interpreted as the formation of small Cu clusters, evolving to a more continuous layer for higher Cu coverage. Annealing in vacuo of the as-prepared Cu(10 Angstrom)-SiLK* interface at 400 degrees C for 1 h does induce an increase of the carbon signal, attributed to further coalescence of copper in metallic clusters. (C) 1999 American Vacuum Society. [S0734-211X(99)05205-1].
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Rajagopal, A., Grégoire, C., Lemaire, J., Pireaux, J.-J., Baklanov, M., Vanhaelemeersch, S., Maex, K., & Waeterloos, J. (1999). Surface characterization of a low dielectric constant polymer-SiLK* polymer, and investigation of its interface with Cu. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 17(5), 2336-2340. https://doi.org/10.1116/1.590914 (Original work published 1999)