MuGFETs for microwave and millimeter wave applications
(2010) International Conference on Solid-State and Integrated Circuit Technology – ICSICT 2010 — Location: Shanghai, China (1.November.2010)
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- Abstract
- In the last years the MOS transistor technology has reach very high cut-off frequencies (near to 500 GHz), thanks to the continuous reduction of the channel length, but the short-channel-effects (SCE) strongly affects the MOSFET behavior below 60 nm. For such technology nodes the Multiple-Gate transistor (MuGFET) appears as a promising alternative to continue with the International Technology Roadmap of Semicoductors (ITRS) projections. In this paper, limitations and possible improvements of MuGFETs are presented.
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Tinoco, J., & Raskin, J.-P. (2010). MuGFETs for microwave and millimeter wave applications. Proceedings of the International Conference on Solid-State and Integrated Circuit Technology – ICSICT 2010, pp. 615-618. https://doi.org/10.1109/ICSICT.2010.5667308