WO/2010/115856 Variable Barrier Tunnel Transistor

Afzalian, Aryan;Colinge, Jean-Pierre
(2010)

Files

brevetWO-2010-115856VariableBarrierTunnelTransistor.pdf
  • Restricted Access
  • Adobe PDF
  • 2.24 MB
Request a copy

Details

Authors
  • Afzalian, AryanTyndall National Institute, University of Cork
    Inventor
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Inventor
Abstract
The present invention provides a transistor device adapted to provide at least one tunnel barrier, controlled by an electrode, such that current flow in the transistor is minimised when the transistor is turned off and the current is maximized when the transistor is turned on. The electrode is for example a gate electrode, such that varying the electrode modifies the tunnel and/or channel barrier to create at least one region of resonant tunneling. A combination of relative (or differential) motion between channel and tunnel barriers modulates the at least one region of resonant tunneling, such that the transistor subthreshold slope is reduced and can reach value below the kT/q limit of classical transistors. The differential motion or variable barrier can lead to a very sensitive effect and a significant improvement of the subthreshold slope and Ion/Ioff ratio.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Afzalian, A., & Colinge, J.-P. (2010). WO/2010/115856 Variable Barrier Tunnel Transistor (Patent No. PCT/EP2010/054472). https://hdl.handle.net/2078.5/255444