Electromigration behaviour of 0.3 µm damascene vs. plasma-etched interconnects : a lifetime and drift analysis
(1998) the IEEE International Interconnect Technology Conference — Location: San Francisco - CA (1998)
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Proost, J., Li, H., Brijs, B., Witvrouw, A., & Maex, K. (1998). Electromigration behaviour of 0.3 µm damascene vs. plasma-etched interconnects : a lifetime and drift analysis. Proceedings, p. 110. https://hdl.handle.net/2078.5/229677