Theoretical and experimental study of beveled thyristor structures
(1979) Solid-State Electronics — Vol. 22, n° 11, p. 967-971 (1979)
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- Abstract
- The design of power semiconductor devices requires a theoretical and technological understanding of the problems associated with surface conditions. A reduction of the breakdown voltage occurs if sufficient attention is not devoted to the surface during the fabrication of these devices. It is possible to realize nearly true bulk breakdown voltages with positively bevelled /b P/-/b N/ junctions by proper selection of the bevel angle, the permittivity of the passivation dielectric and by control of the charges at the dielectric-silicon interface. The analysis has been performed with a two-dimensional computer program model for /b P/-/b N/ junctions protected by a bevel. Poisson's equation is solved by an optimized successive overrelaxation method. The theoretical results are verified by means of a local carrier injection method using a laser beam, in order to measure the width of the surface depletion region.
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Couvreur, P., & Van de Wiele, F. (1979). Theoretical and experimental study of beveled thyristor structures. Solid-State Electronics, 22(11), 967-971. https://hdl.handle.net/2078.5/149105 (Original work published 1979)