Inversion layers in heterojunctions
(1971) Proceedings of the international conference on the physics and chemistry of semiconductor heterojunctions and layer structures — Location: Budapest, Hungary (11.October.1970)
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- Abstract
- Examines by means of a simple model, valid for small currents and for non-degenerate semiconductors, under which conditions of doping and applied voltage an inversion layer may exist in an abrupt heterojunction; interface states are taken into account. The influence of such a layer on the energy band diagram and on the junction capacitance is studied and compared to the influence of the interface states.
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Demoulin, E., & Van de Wiele, F. (1971). Inversion layers in heterojunctions. Proceedings of the international conference on the physics andchemistry of semiconductor heterojunctions and layer structures, p. 267-274. https://hdl.handle.net/2078.5/231051