Junctionless multigate field-effect transistor
(2009) Applied Physics Letters — Vol. 94, p. 053511-1 - 2 (2009)
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- Abstract
- This paper describes a metal-oxide-semiconductor MOS transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed device is a thin and narrow multigate field-effect transistor, which can be fully depleted and turned off by the gate. Since this device has no junctions, it has simpler fabrication process, less variability, and better electrical properties than classical MOS devices with source and drain PN junctions.
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Citations
Lee, C.-W., Afzalian, A., Dehdashti-Akhavan, N., Yan, R., ferain, I., & Colinge, J.-P. (2009). Junctionless multigate field-effect transistor. Applied Physics Letters, 94, 053511-1 - 2. https://doi.org/10.1063/1.3079411 (Original work published 2009)