Study by Weak Beam and HRTEM of double stacking faults created by external mechanical stress in 4H-SiC
(2004) Material Research Society spring meeting 2004 — Location: San Francisco, USA
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- Abstract
- 4H-SiC samples are bent in compression mode at 550°C and 620°C. The introduced-defects are identified by Weak Beam and HRTEM techniques. They consist of double stacking faults bounded by 30° Si(g) partial dislocations whose glide locally transforms the material in its cubic phase. The velocity of partial dislocations is measured after chemical etching of the sample surface. The formation and the expansion of the double stacking faults are discussed.
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Idrissi, H., Lancin, M., Douin, J., Regula, G., Pichaud, B., El Bouayadi, R., & Roussel, J.-M. (2004). Study by Weak Beam and HRTEM of double stacking faults created by external mechanical stress in 4H-SiC. Materials Research Society Symposium Proceedings, 815, 115. https://doi.org/10.1557/PROC-815-J7.2 (Original work published 2004)