SOI technologies for RF and millimeter-wave integrated circuits

Raskin, Jean-Pierre
(2022) International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication & Computational Intelligence – — Location: Chennai, Tamilnadu, India (online/virtual mode) (22.April.2022)

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Performances of RF and millimeter wave integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back end of l ine process as well as the electromagnetic properties of the substrate. Silicon on Insulator (SOI) technology has taken the r adio frequency (RF) world by storm in the past decade. By offering high performance at low cost it has steadily displaced Gallium Arsenide and Silicon on Sapphire technologies to become the mainstream technology for RF switch banks in mobile applications. In 2008, RF SOI accounted for less than 10% of switching modules in handsets, and today (20 22 ) virtually 100% of all modern day smartphones include RF switches implemented in partially depleted (PD) SOI on engineered and optimized trap rich (TR) silicon ba sed substrates [ 1]. The success of PD SOI (130 nm) in today’s RF market is not only due to significant technological improvements at the transistor level, but necessary optimizations have also been made at the substrate and back end of line levels to enabl e performance RF applications.
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Raskin, J.-P. (2022). SOI technologies for RF and millimeter-wave integrated circuits. International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication & Computational Intelligence –, Chennai, Tamilnadu, India (online/virtual mode). https://hdl.handle.net/2078.5/229543