Oxygen plasma and warm nitric acid surface activation for low-temperature wafer bonding
(2006) Journal of the Electrochemical Society — Vol. 153, n° 12, p. G1099-G1105 (2006)
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- Abstract
- In this paper, the void formation and the surface energy for low-temperature Si-Si wafer bonding technique as a function of the annealing time and temperature as well as warm nitric acid and O-2-plasma-assisted surface pretreatments are considered and compared. The analysis of the surface energy vs annealing time exhibits two main bonding mechanisms: (i) rapid reaction between silanol groups which leads to a quick enhancement of the bonding strength, and (ii) slow further increase of bonding strength and improvement of the bonding uniformity thanks to the out-diffusion of interface voids. (c) 2006 The Electrochemical Society.
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Zhang, X., Olbrechts, B., & Raskin, J.-P. (2006). Oxygen plasma and warm nitric acid surface activation for low-temperature wafer bonding. Journal of the Electrochemical Society, 153(12), G1099-G1105. https://doi.org/10.1149/1.2359700 (Original work published 2006)