Inversion layers in abrupt heterojunctions

Demoulin, E.;Van de Wiele, F.
(1971) Physica Status Solidi. A: Applied Research — Vol. 6, n° 2, p. 487-497 (1971)

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  • Demoulin, E.
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  • Van de Wiele, F.
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Abstract
The existence of an inversion layer near the metallurgical junction of abrupt asymmetrical heterojunctions is examined using a simple model, valid for reverse bias. Its influence on the energy band diagram and on the junction capacitance is investigated and compared to the influence of interface states. Numerical examples for Si-Ge heterojunctions are given.
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Demoulin, E., & Van de Wiele, F. (1971). Inversion layers in abrupt heterojunctions. Physica Status Solidi. A: Applied Research, 6(2), 487-497. https://hdl.handle.net/2078.5/49869 (Original work published 1971)