Ion implanted MOS transistors
(1977) Proceedings of the NATO Advanced Study Institute on Process and Device Modelling for Integrated Circuit Design — Location: Louvain-la-Neuve, Belgium (19.July.1977)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- A review of the principal features of ion implanted transistors is presented. A detailed analysis of the threshold voltage shift is given, with emphasis directed towards dose and energy effects. Analytical expressions are derived for enhancement mode devices and compared with numerical solutions; the effect of the implantation on subthreshold currents is described. Some aspects of depletion mode transistors are treated.
- Affiliations
Citations
Demoulin, E., & Van de Wiele, F. (1977). Ion implanted MOS transistors. In van de Wiele, F.; Engl, W.L.; Jespers, P.G.; (ed.), Proceedings of the NATO Advanced Study Institute on Process and DeviceModelling for Integrated Circuit Design (p. p. 617-676). Noordhoff. https://hdl.handle.net/2078.5/221899