Dynamical study of dislocations and 4H→3C transformation induced by stress in (11-20) 4H-SiC
(2005) European Conference on Silicon Carbide and Related Materials 2004 — Location: Bologna, Italy
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- Abstract
- 4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introduced-defects were identified by Weak Beam (WB) and High Resolution Transmission Electron Microscopy (HRTEM) techniques. They consist of double stacking faults bound by 30° Si(g) partial dislocations whose glide locally transforms the material in its cubic phase. The velocity of partial dislocations was measured after chemical etching of the sample surface. The formation and the expansion of the double stacking faults are discussed.
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Idrissi, H., Lancin, M., Douin, J., Regula, G., & Pichaud, B. (2005). Dynamical study of dislocations and 4H→3C transformation induced by stress in (11-20) 4H-SiC. Materials Science Forum, 483-485, 299-302. https://doi.org/10.4028/www.scientific.net/MSF.483-485.299 (Original work published 2005)