High efficiency interdigitated back contact silicon solar cells
(1987) Conference Record of the Nineteenth IEEE Photovoltaic Specialists Conference - 1987 (Cat. No.87CH2400-0) — Location: New Orleans, LA, USA (4.May.1987)
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- Abstract
- Interdigitated back contact (IBC) silicon solar cells with 25.6% efficiency at 10 W/cm/sup 2/ and 24.4% at 30 W/cm/sup 2/ were fabricated. The authors report on the technological process, which produces a high effective carrier lifetime in the bulk (780 mu s), and on the characterization of the cells. The front side of these cells is textured and has a very efficient polka-dot floating tandem junction. IBC and point-contact (PC) cells are fabricated on the same substrate and their efficiencies are compared. The possibility of reaching 29% efficiency at 300X is shown.
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Verlinden, P., Van de Wiele, F., Stehelin, G., Floret, F., & David, J. P. (1987). High efficiency interdigitated back contact silicon solar cells. Conference Record of the Nineteenth IEEE Photovoltaic SpecialistsConference - 1987 (Cat. No.87CH2400-0), p. 405-410. https://hdl.handle.net/2078.5/227253