Study of thermal stability of nickel silicide by X-ray reflectivity
(2005) Microelectronic Engineering — Vol. 82, n° 3-4, p. 492-496 (2005)
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- Abstract
- The thermal stability of Ni silicide, in comparison to the more conventionally used Co silicide, is studied by X-ray reflectivity. These data were complemented by sheet resistance measurements, transmission electron microscopy, time-of-flight Rutherford backscattering spectrometry, X-ray diffraction and time-of-flight elastic recoil detection analysis. (c) 2005 Published by Elsevier B.V.
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Van Hove, M.-A., Travaly, Y., Sajavaara, T., Brijs, B., Vandervorst, W., Lauwers, A., Chamirian, O., Kittl, J., Jonas, A., & Maex, K. (2005). Study of thermal stability of nickel silicide by X-ray reflectivity. Microelectronic Engineering, 82(3-4), 492-496. https://doi.org/10.1016/j.mee.2005.07.048 (Original work published 2005)