Fabrication process of Si memory dot and quantum channel based on as dopant statistical distribution effect
(1997) International Conference on Solid-State Devices and Materials (SSDM 1997) — Location: Hamamatsu (Japan) (16.September.1997)
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- Single-electron memory, which operation is based on the storage of very few electrons (possibly one) in a memory dot embedded between a MOSFET channel and a control gate, has recently attracted much attraction. This is mainly due to n emerging demand for high density and low power dissipation in future integrated circuit devices; It is very important to develop a simple process in the fabrication technology of Si single-electron memory. Up to now, there have been several reports about fabrication process of single-electron memory on Si substrates and SOI wafers [1][3], however, these processes utilized very fine electron-beam lithography and complicated technology. This paper purposes to develop a simple fabrication process of Si single-electron memory based on As dopant effect in accordance with the mechanism described below.
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Tang, X., Baie, X., & Colinge, J.-P. (1997). Fabrication process of Si memory dot and quantum channel based on as dopant statistical distribution effect. Proceedings of the International Conference on Solid-State Devices and Materials (SSDM 1997), p. 484-485. https://hdl.handle.net/2078.5/229213