Double Snapback in Soi Nmosfets and its Application for Soi Esd Protection
(1993) IEEE Electron Device Letters — Vol. 14, n° 7, p. 326-328 (1993)
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- Abstract
- This paper reports on a newly discovered phenomenon of double snapback observed in SOI nMOSFET's. An extensive experimental analysis of this phenomenon and a tentative model are presented. It will be shown that based on this double-snapback phenomenon, perspectives are offered towards a new electrostatic discharge (ESD) protection concept for SOI technologies.
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Citations
Verhaege, K., Groeseneken, G., Colinge, JP., & Maes, HE. (1993). Double Snapback in Soi Nmosfets and its Application for Soi Esd Protection. IEEE Electron Device Letters, 14(7), 326-328. https://doi.org/10.1109/55.225561 (Original work published 1993)