Les MOS en technologie SOI pour les applications hyperfréquences : “Partially Depleted” ou “Fully Depleted" ?

Vanmackelberg, M.;Raynaud, C.;Raskin, Jean-Pierre;Bracale, A.;Dambrine, G.;et.al.
(2001) Journées Nationales Micro-ondes – JNM’2001 — Location: Poitiers, France (16.May.2001)

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  • Vanmackelberg, M.IEMN, Villeneuve d'Ascq, France
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  • Raynaud, C.IEMN, Villeneuve d'Ascq, France
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  • Bracale, A.IEMN, Villeneuve d'Ascq, France
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  • Dambrine, G.IEMN, Villeneuve d'Ascq, France
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Vanmackelberg, M., Raynaud, C., Raskin, J.-P., Bracale, A., Jomaah, J., & Dambrine, G. (2001). Les MOS en technologie SOI pour les applications hyperfréquences : “Partially Depleted” ou “Fully Depleted” ? Proceedings of the Journées Nationales Micro-ondes – JNM’2001, p. 2 pages (paper 3C-3). https://hdl.handle.net/2078.5/229551