A general finite difference formulation for combined triangular and rectangular grids with application to a gate controlled rectifier in the on-state

Palm, E.;van de Wiele, F.
(1983) NASECODE III. Proceedings of the Third International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits — Location: Galway, Ireland (15.June.1983)

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  • Palm, E.
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  • van de Wiele, F.
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Abstract
The question whether the finite element (FE) or the finite difference (FD) method is better suited for the simulation of semiconductor devices, may loose its importance if one realizes that the most successful FE approaches can be described by FD formulas. A unique and simple formulation is presented that covers combined rectangular and triangular grids. The successive line overrelaxation method (SLOR) has been adapted to the irregular matrix structure that results from a FE like mesh. The method was found to be very interesting, because it is economic in both CPU time and memory requirements. The numerical approaches are applied to the static analysis of a gate controlled power rectifier in the on-state. The device behaviour is essentially two-dimensional and, for the considered anode currents, it is very sensitive to the gate bias and current.
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Palm, E., & van de Wiele, F. (1983). A general finite difference formulation for combined triangular and rectangular grids with application to a gate controlled rectifier in the on-state. In Miller, J.J.H.; (ed.), NASECODE III. Proceedings of the Third International Conference on theNumerical Analysis of Semiconductor Devices and Integrated Circuits (p. p. 214-219). Boole press. https://hdl.handle.net/2078.5/223650