Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
(2001) Semiconductor Science and Technology — Vol. 16, n° 5, p. 402-405 (2001)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, tau (q), and this is compared with the classical transport lifetime, tau (t), derived from the low-field mobility. The relationship between these parameters has been observed to depend systematically on the low-field mobility of the samples studied, and indicates that higher-mobility samples suffer less scattering from centres close to the two-dimensional conducting channel.
- Affiliations
Citations
Harris, J., Lee, K., Wang, T., Sakai, S., Bougrioua, Z., Moerman, I., Thrush, E., Webb, J., Tang, H., Martin, T., Maude, D., & Portal, J. (2001). Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures. Semiconductor Science and Technology, 16(5), 402-405. https://doi.org/10.1088/0268-1242/16/5/321 (Original work published 2001)